Invention Grant
- Patent Title: Simplified copper-copper bonding
- Patent Title (中): 简化铜铜键合
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Application No.: US13380595Application Date: 2010-07-01
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Publication No.: US08647983B2Publication Date: 2014-02-11
- Inventor: Lea Di Cioccio , Pierric Gueguen , Maurice Rivoire
- Applicant: Lea Di Cioccio , Pierric Gueguen , Maurice Rivoire
- Applicant Address: FR Paris FR Crolles
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMicroelectronics (Crolles 2) SAS
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0954608 20090703
- International Application: PCT/EP2010/059335 WO 20100701
- International Announcement: WO2011/000898 WO 20110106
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/50

Abstract:
A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other.
Public/Granted literature
- US20120100657A1 SIMPLIFIED COPPER-COPPER BONDING Public/Granted day:2012-04-26
Information query
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