Invention Grant
- Patent Title: Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method
- Patent Title (中): 热检测器,热检测装置,电子仪器和热检测器制造方法
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Application No.: US14050630Application Date: 2013-10-10
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Publication No.: US08648304B1Publication Date: 2014-02-11
- Inventor: Yasushi Tsuchiya
- Applicant: Seiko Epson Corporation
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Global IP Counselors, LLP
- Priority: JP2010-286334 20101222; JP2010-289491 20101227; JP2010-289492 20101227; JP2011-012060 20110124; JP2011-036886 20110223
- Main IPC: G01J5/08
- IPC: G01J5/08

Abstract:
A thermal detector manufacturing method includes: forming a sacrificial layer on a structure including an insulating layer; forming a support member on the sacrificial layer; forming on the support member a heat-detecting element; forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing layer; forming a contact hole in a portion of the first light-absorbing layer, subsequently forming a thermal transfer member having a connecting portion that connects to the heat-detecting element and a thermal collecting portion having a surface area greater than that of the connecting portion as seen in plan view; forming a second light-absorbing layer on the first light-absorbing layer; and removing the sacrificial layer to form a cavity between the support member and the structure including the insulating layer formed on the surface of the substrate.
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