Invention Grant
- Patent Title: Nonvolatile memory device and method of fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US12724732Application Date: 2010-03-16
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Publication No.: US08648323B2Publication Date: 2014-02-11
- Inventor: Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
- Applicant: Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-198229 20090828
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.
Public/Granted literature
- US20110049463A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-03-03
Information query
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