Invention Grant
- Patent Title: Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent Title (中): 外延衬底和外延衬底的制造方法
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Application No.: US13644651Application Date: 2012-10-04
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Publication No.: US08648351B2Publication Date: 2014-02-11
- Inventor: Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Sota Maehara , Mitsuhiro Tanaka
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-103188 20100428
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L29/15
Abstract:
Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN (0≦x x(n) is satisfied, where n represents the number of laminations of each of the first and the second composition layer, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. Each of the second composition layers is formed so as to be in a coherent state relative to the first composition layer.
Public/Granted literature
- US20130026488A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE Public/Granted day:2013-01-31
Information query
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