Invention Grant
- Patent Title: Semiconductor light emitting structure
- Patent Title (中): 半导体发光结构
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Application No.: US13314340Application Date: 2011-12-08
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Publication No.: US08648352B2Publication Date: 2014-02-11
- Inventor: Chang-Chin Yu , Mong-Ea Lin
- Applicant: Chang-Chin Yu , Mong-Ea Lin
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW100117993A 20110523
- Main IPC: H01L29/15
- IPC: H01L29/15

Abstract:
A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.
Public/Granted literature
- US20120299013A1 SEMICONDUCTOR LIGHT EMITTING STRUCTURE Public/Granted day:2012-11-29
Information query
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