Invention Grant
- Patent Title: Light emitting diode for harsh environments
- Patent Title (中): 用于恶劣环境的发光二极管
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Application No.: US13858532Application Date: 2013-04-08
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Publication No.: US08648356B2Publication Date: 2014-02-11
- Inventor: Jason D. Colvin , Arthur E. Colvin, Jr. , Andrew DeHennis , Jody L. Krsmanovic
- Applicant: Senseonics, Incorporated
- Applicant Address: US MD Germantown
- Assignee: Senseonics, Incorporated
- Current Assignee: Senseonics, Incorporated
- Current Assignee Address: US MD Germantown
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically connecting the light emitting diode to a printed circuit board. An underfill layer may be provided between the bottom surface of the substrate and the top surface of the printed circuit board, to reduce water infiltration under the light emitting diode substrate. Additionally, a diffuser may be mounted to a top surface of the light emitting diode substrate to diffuse the light emitted through the top surface.
Public/Granted literature
- US20130328089A1 LIGHT EMITTING DIODE FOR HARSH ENVIRONMENTS Public/Granted day:2013-12-12
Information query
IPC分类:
