Invention Grant
- Patent Title: High performance multi-finger strained silicon germanium channel PFET and method of fabrication
- Patent Title (中): 高性能多指应变硅锗通道PFET及其制造方法
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Application No.: US13396970Application Date: 2012-02-15
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Publication No.: US08648388B2Publication Date: 2014-02-11
- Inventor: Ali Khakifirooz , Thomas N. Adam , Kangguo Cheng , Alexander Reznicek
- Applicant: Ali Khakifirooz , Thomas N. Adam , Kangguo Cheng , Alexander Reznicek
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Parashos Kalaitzis; Howard M Cohn
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A field effect transistor and method of fabrication are provided. The field effect transistor comprises a plurality of elongated uniaxially-strained SiGe regions disposed on a silicon substrate, oriented such that they are in parallel to the direction of flow of electrical carriers in the channel. The elongated uniaxially-strained SiGe regions are oriented perpendicular to, and traverse through the transistor gate.
Public/Granted literature
- US20130207162A1 HIGH PERFORMANCE MULTI-FINGER STRAINED SILICON GERMANIUM CHANNEL PFET AND METHOD OF FABRICATION Public/Granted day:2013-08-15
Information query
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