Invention Grant
US08648391B2 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product
有权
SiGe异质结双极晶体管具有改进的击穿电压截止频率积
- Patent Title: SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product
- Patent Title (中): SiGe异质结双极晶体管具有改进的击穿电压截止频率积
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Application No.: US13429262Application Date: 2012-03-23
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Publication No.: US08648391B2Publication Date: 2014-02-11
- Inventor: Jeffrey A. Babcock , Alexei Sadovnikov
- Applicant: Jeffrey A. Babcock , Alexei Sadovnikov
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with a hollow core that extends down from the base to the heavily-doped buried collector region. The doped region and the buried collector region have opposite dopant types.
Public/Granted literature
- US20130249057A1 SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN IMPROVED BREAKDOWN VOLTAGE-CUTOFF FREQUENCY PRODUCT Public/Granted day:2013-09-26
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