Invention Grant
- Patent Title: Semiconductor device, active matrix substrate and display device
- Patent Title (中): 半导体器件，有源矩阵基板和显示器件
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Application No.: US13515921Application Date: 2010-11-02
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Publication No.: US08648397B2Publication Date: 2014-02-11
- Inventor: Seiji Kaneko , Hidehito Kitakado
- Applicant: Seiji Kaneko , Hidehito Kitakado
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Chen Yoshimura LLP
- Priority: JP2009-286440 20091217
- International Application: PCT/JP2010/069462 WO 20101102
- International Announcement: WO2011/074338 WO 20110623
- Main IPC: H01L29/80
- IPC: H01L29/80
Abstract:
A switching element (a semiconductor device) (18) having a top gate electrode (21) and a bottom gate electrode (23) is provided with a silicon layer (a semiconductor layer) (SL) that is arranged between the top gate electrode (21) and the bottom gate electrode (a light-shielding film) (23) and that has a source region (24), a drain region (28), a channel region (26), and low-concentration impurity regions (25, 27). Furthermore, the bottom gate electrode (23) is arranged so as to overlap the channel region (26), a part of the low-concentration impurity region (25), which is adjacent to the source region (24), and a part of the low-concentration impurity region (27), which is adjacent to the drain region (28). The bottom gate electrode (23) is controlled so as to have a prescribed potential.
Public/Granted literature
- US20120256184A1 SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2012-10-11
Information query
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