A Reverse Bipolar Junction Transistor (RBJT) integrated circuit comprises a bipolar transistor and a parallel-coupled distributed diode. The bipolar transistor involves many N-type collector regions. Each N-type collector region has a central hole so that P-type material from an underlying P-type region extends up into the hole. A collector metal electrode covers the central hole forming a diode contact at the top of the hole. When the distributed diode conducts, current flows from the collector electrode, down through the many central holes in the many collector regions, through corresponding PN junctions, and to an emitter electrode disposed on the bottom side of the IC. The RBJT and distributed diode integrated circuit has emitter-to-collector and emitter-to-base reverse breakdown voltages exceeding twenty volts. The collector metal electrode is structured to contact the collector regions, and to bridge over the base electrode, resulting in a low collector-to-emitter voltage when the RBJT is on.