Semiconductor device and method for fabricating thereof

Invention Grant

US08648407B2 Semiconductor device and method for fabricating thereof 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method for fabricating thereof
Patent Title (中): 半导体装置及其制造方法
Application No.: US13350767

Application Date: 2012-01-14
Publication No.: US08648407B2

Publication Date: 2014-02-11
Inventor: Tieh-Chiang Wu , Chin-Ling Huang
Applicant: Tieh-Chiang Wu , Chin-Ling Huang
Applicant Address: TW Taoyuan
Assignee: Nanya Technology Corporation
Current Assignee: Nanya Technology Corporation
Current Assignee Address: TW Taoyuan
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L29/792

Semiconductor device and method for fabricating thereof

Abstract:

A semiconductor device includes a semiconductor substrate having a first opening and a second opening adjacent thereto. A first dielectric layer is disposed in a lower portion of the first opening. A charge-trapping dielectric layer is disposed in an upper portion of the first opening to cover the first dielectric layer. A doping region of a predetermined conductivity type is formed in the semiconductor substrate adjacent to the first opening and the second opening, wherein the doping region of the predetermined conductivity type has a polarity which is different from that of the charges trapped in the charge-trapping dielectric layer. A gate electrode is disposed in a lower portion of the second opening. A method for fabricating the semiconductor device is also disclosed.

Abstract(Chinese):

半导体器件包括具有第一开口和与其相邻的第二开口的半导体衬底。第一介电层设置在第一开口的下部。电荷捕获电介质层设置在第一开口的上部以覆盖第一电介质层。在与第一开口和第二开口相邻的半导体衬底中形成预定导电类型的掺杂区域，其中预定导电类型的掺杂区域具有与捕获在电荷俘获中的电荷的极性不同的极性电介质层。栅电极设置在第二开口的下部。还公开了制造半导体器件的方法。

Public/Granted literature

US20130181277A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF Public/Granted day:2013-07-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺