Invention Grant
- Patent Title: Non-volatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13238295Application Date: 2011-09-21
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Publication No.: US08648409B2Publication Date: 2014-02-11
- Inventor: Han-Soo Joo , Dong-Kee Lee , Sang-Hyun Oh
- Applicant: Han-Soo Joo , Dong-Kee Lee , Sang-Hyun Oh
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0019440 20110304
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A method for fabricating a non-volatile memory device includes forming a channel link layer and an isolation layer surrounding the channel link layer over a substrate, forming a stack structure having interlayer dielectric layers that are alternately stacked with gate electrode layers over the channel link layer and the isolation layer, and forming a pair of channels connected to the channel link layer through the stack structure, and a memory layer interposed between the channel and the stack structure.
Public/Granted literature
- US20120223382A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-09-06
Information query
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