Semiconductor device with impurity region with increased contact area

Invention Grant

US08648415B2 Semiconductor device with impurity region with increased contact area 有权

Title translation: 具有杂质区域的半导体器件具有增加的接触面积

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Patent Title: Semiconductor device with impurity region with increased contact area
Patent Title (中): 具有杂质区域的半导体器件具有增加的接触面积
Application No.: US12967089

Application Date: 2010-12-14
Publication No.: US08648415B2

Publication Date: 2014-02-11
Inventor: Koji Taniguchi
Applicant: Koji Taniguchi
Agency: Young & Thompson
Priority: JP2009-288045 20091218
Main IPC: H01L29/66
IPC: H01L29/66

Semiconductor device with impurity region with increased contact area

Abstract:

A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.

Abstract(Chinese):

半导体器件包括半导体衬底，半导体衬底中的杂质区域和与杂质区域的顶表面和至少杂质区域的侧表面接触的导电层。

Public/Granted literature

US20110147834A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-06-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的