Invention Grant
- Patent Title: Acoustic semiconductor device
- Patent Title (中): 声学半导体器件
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Application No.: US13220116Application Date: 2011-08-29
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Publication No.: US08648431B2Publication Date: 2014-02-11
- Inventor: Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
- Applicant: Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-064855 20110323
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
Public/Granted literature
- US20120241877A1 ACOUSTIC SEMICONDUCTOR DEVICE Public/Granted day:2012-09-27
Information query
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