Invention Grant
- Patent Title: Magnetic memory devices
- Patent Title (中): 磁存储器件
-
Application No.: US13236888Application Date: 2011-09-20
-
Publication No.: US08648434B2Publication Date: 2014-02-11
- Inventor: Woojin Kim , Jangeun Lee , Sechung Oh , Younghyun Kim , Sukhun Choi , Woochang Lim
- Applicant: Woojin Kim , Jangeun Lee , Sechung Oh , Younghyun Kim , Sukhun Choi , Woochang Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0110520 20101108
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a component which lies in a plane perpendicular to the magnetization direction of the magnetic pattern.
Public/Granted literature
- US20120112298A1 MAGNETIC MEMORY DEVICES Public/Granted day:2012-05-10
Information query
IPC分类:
