Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13150674Application Date: 2011-06-01
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Publication No.: US08648455B2Publication Date: 2014-02-11
- Inventor: Hidehiro Takeshima
- Applicant: Hidehiro Takeshima
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-126078 20100601
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L29/06 ; H01L23/34 ; H01L23/48 ; H01L23/52

Abstract:
A semiconductor device includes a wiring substrate having an insulating film formed on a surface thereof, a first semiconductor chip mounted on the wiring substrate, and a second semiconductor chip stacked and mounted on the first semiconductor chip so as to form an overhang portion. The insulating film is removed from an area of the wiring substrate that faces the overhang portion.
Public/Granted literature
- US20110291244A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-12-01
Information query
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