Invention Grant
- Patent Title: Semiconductor power module
- Patent Title (中): 半导体电源模块
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Application No.: US13114475Application Date: 2011-05-24
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Publication No.: US08648462B2Publication Date: 2014-02-11
- Inventor: Koichi Ushijima
- Applicant: Koichi Ushijima
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-182727 20100818
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H05K7/20

Abstract:
A semiconductor power module includes an active element and a passive element serving as semiconductor elements each having a first electrode on a front surface and a second electrode on a back surface thereof, a heat pipe having a first region defined as arrangement parts of the active element and the passive element on its one end side and electrically connected to one of the first and second electrodes of the active element and the passive element arranged in the first region, a cooling fin arranged in a second region defined on the other end side of the heat pipe, and a heat pipe provided to sandwich the active element, the passive element, and the cooling fin arranged on the heat pipe along with the heat pipe and electrically connected to the other of the first and second electrodes of the active element and passive element.
Public/Granted literature
- US20120043652A1 SEMICONDUCTOR POWER MODULE Public/Granted day:2012-02-23
Information query
IPC分类: