Invention Grant
- Patent Title: Semiconductor device and method of testing semiconductor device
- Patent Title (中): 半导体器件及半导体器件的测试方法
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Application No.: US13022174Application Date: 2011-02-07
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Publication No.: US08648617B2Publication Date: 2014-02-11
- Inventor: Yuji Maruyama , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
- Applicant: Yuji Maruyama , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2010-057470 20100315
- Main IPC: G01R31/26
- IPC: G01R31/26
Abstract:
According to the following disclosure, disclosed is a semiconductor device including: an internal circuit configured to receive and output a signal current; a current mirror unit outputting a copied current corresponding to the signal current; and a test pad from which the copied current is taken out.
Public/Granted literature
- US20110221466A1 SEMICONDUCTOR DEVICE AND METHOD OF TESTING SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
