Invention Grant
- Patent Title: Low-noise amplifier with through-mode
- Patent Title (中): 具有通过模式的低噪声放大器
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Application No.: US13758420Application Date: 2013-02-04
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Publication No.: US08648656B2Publication Date: 2014-02-11
- Inventor: Yusuke Nozaki , Hiroyuki Kohama , Masaru Fukusen , Naoki Okamoto
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-123723 20110601
- Main IPC: H03F1/14
- IPC: H03F1/14 ; H03F1/22 ; H03F1/52

Abstract:
The low-noise amplifier with through mode is configured such that a source grounded transistor and a gate grounded transistor are connected in cascode, and a load impedance element and a switching transistor are serially connected between the drain of the gate grounded transistor and a power supply, and a through pass circuit is connected between an input terminal and an output terminal. The gate voltage of the gate grounded transistor is regulated by a bias circuit and the voltage of a mode control terminal is converted by a level shifter to control the gate voltage of the switching transistor, whereby, in the case of using only transistors whose terminal-to-terminal breakdown voltages are each equal to or less than the power supply voltage, it becomes feasible to prevent voltages equal to or more than the terminal-to-terminal breakdown voltages from being applied between the terminals of each transistor.
Public/Granted literature
- US20130141168A1 LOW-NOISE AMPLIFIER WITH THROUGH-MODE Public/Granted day:2013-06-06
Information query
IPC分类: