Invention Grant
- Patent Title: End-loaded topology for D-plane polarization improvement
- Patent Title (中): 用于D平面极化改进的终端拓扑
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Application No.: US12771933Application Date: 2010-04-30
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Publication No.: US08648757B2Publication Date: 2014-02-11
- Inventor: Richard T. Remski , Kevin W. Ommodt , James M. Irion, II
- Applicant: Richard T. Remski , Kevin W. Ommodt , James M. Irion, II
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Christie, Parker & Hale, LLP
- Main IPC: H01Q13/10
- IPC: H01Q13/10 ; H01Q21/00

Abstract:
The embodiments described herein are directed to providing a notched antenna element for improving polarization control without sacrificing gain, bandwidth, scan volume, recurring cost, or manufacturability. The notched antenna element includes a base portion comprising a plurality of contiguous first cross-sectional notched antenna elements, each of the plurality of first cross-sectional notched antenna elements configured in an end-loaded structure for increasing polarization stability; and an upper portion coupled to the base portion, the upper portion comprising a plurality of contiguous second cross-sectional notch antenna elements.
Public/Granted literature
- US20110267248A1 END-LOADED TOPOLOGY FOR D-PLANE POLARIZATION IMPROVEMENT Public/Granted day:2011-11-03
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