Invention Grant
US08649137B2 Semiconductor device and method of forming same for ESD protection
有权
用于ESD保护的半导体器件及其形成方法
- Patent Title: Semiconductor device and method of forming same for ESD protection
- Patent Title (中): 用于ESD保护的半导体器件及其形成方法
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Application No.: US13277862Application Date: 2011-10-20
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Publication No.: US08649137B2Publication Date: 2014-02-11
- Inventor: Noureddine Senouci , Alexander Heubi
- Applicant: Noureddine Senouci , Alexander Heubi
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Patents on Demand, P.A.
- Agent Scott M. Garrett; Brian K. Buchheit
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04

Abstract:
In an embodiment a circuit provides protection against electrostatic discharge (ESD). A shunt device is controlled to provide a current bypass upon the occurrence of an ESD event. A trigger circuit controls operation of the shunt device and includes an inverter and a hysteresis means to prevent oscillation of the trigger circuit. A reference is used to trigger the control circuit and has a time constant associated with it to distinguish between power up events and ESD events.
Public/Granted literature
- US20130100561A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME FOR ESD PROTECTION Public/Granted day:2013-04-25
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