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US08649200B2 Enhanced programming and erasure schemes for analog memory cells 有权
增强的模拟存储单元的编程和擦除方案

Enhanced programming and erasure schemes for analog memory cells
Abstract:
A method for data storage includes setting a group of analog memory cells to respective analog values by performing an iterative process that applies a sequence of pulses to the memory cells in the group. During the iterative process, a progress of the iterative process is assessed, and a parameter of the iterative process is modified responsively to the assessed progress. The iterative process is continued in accordance with the modified parameter.
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