Invention Grant
- Patent Title: Enhanced programming and erasure schemes for analog memory cells
- Patent Title (中): 增强的模拟存储单元的编程和擦除方案
-
Application No.: US13471483Application Date: 2012-05-15
-
Publication No.: US08649200B2Publication Date: 2014-02-11
- Inventor: Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
- Applicant: Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C27/00
- IPC: G11C27/00

Abstract:
A method for data storage includes setting a group of analog memory cells to respective analog values by performing an iterative process that applies a sequence of pulses to the memory cells in the group. During the iterative process, a progress of the iterative process is assessed, and a parameter of the iterative process is modified responsively to the assessed progress. The iterative process is continued in accordance with the modified parameter.
Public/Granted literature
- US20120224404A1 ENHANCED PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS Public/Granted day:2012-09-06
Information query