Embodiments of reversible resistive memory cells using polysilicon diodes are disclosed. The programmable resistive devices can be fabricated using standard CMOS logic processes to reduce cell size and cost. In one embodiment, polysilicon diodes can be used as program selectors for reversible resistive memory cells that can be programmed based on magnitude, duration, voltage-limit, or current-limit of a supply voltage or current. These cells are PCRAM, RRAM, CBRAM, or other memory cells that have a reversible resistive element coupled to a polysilicon diode. The polysilicon diode can be constructed by P+/N+ implants on a polysilicon substrate as a program selector. The memory cells can be used to construct a two-dimensional memory array with the N-terminals of the diodes in a row connected as a wordline and the reversible resistive elements in a column connected as a bitline. By applying a voltage or a current to a selected bitline and to a selected wordline to turn on the diode, a selected cell can be programmed into different states reversibly based on magnitude, duration, voltage-limit, or current-limit. The data in the reversible resistive memory can also be read by turning on a selected wordline to couple a selected bitline to a sense amplifier. The wordlines may have high-resistivity local wordlines coupled to low-resistivity global wordlines through conductive contact(s) or via(s).