Invention Grant
- Patent Title: Memory bit redundant vias
- Patent Title (中): 存储器位冗余通孔
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Application No.: US13528528Application Date: 2012-06-20
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Publication No.: US08649211B2Publication Date: 2014-02-11
- Inventor: Mark A. Dexter , Sarma S. Gunturi
- Applicant: Mark A. Dexter , Sarma S. Gunturi
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An integrated circuit containing a memory array with memory bits and a differential sense amplifier for reading the logic state of the memory bits. The integrated circuit also contains redundant vias which are in the via path that couples a bitline to Vss. Moreover, an integrated circuit containing a FLASH memory bit with redundant vias in the via path from the bitline to Vss.
Public/Granted literature
- US20120257441A1 MEMORY BIT REDUNDANT VIAS Public/Granted day:2012-10-11
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