Invention Grant
- Patent Title: Multiple bit phase change memory cell
- Patent Title (中): 多位相变存储单元
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Application No.: US12935656Application Date: 2009-03-30
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Publication No.: US08649213B2Publication Date: 2014-02-11
- Inventor: Ludovic R. A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J. C. C. M. Wouters
- Applicant: Ludovic R. A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J. C. C. M. Wouters
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08103304 20080401
- International Application: PCT/IB2009/051327 WO 20090330
- International Announcement: WO2009/122347 WO 20091008
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.
Public/Granted literature
- US20120069645A1 MULTIPLE BIT PHASE CHANGE MEMORY CELL Public/Granted day:2012-03-22
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