Invention Grant
US08649232B2 Internal voltage generation circuit and semiconductor integrated circuit 有权
内部电压产生电路和半导体集成电路

  • Patent Title: Internal voltage generation circuit and semiconductor integrated circuit
  • Patent Title (中): 内部电压产生电路和半导体集成电路
  • Application No.: US13243775
    Application Date: 2011-09-23
  • Publication No.: US08649232B2
    Publication Date: 2014-02-11
  • Inventor: Hee Joon Lim
  • Applicant: Hee Joon Lim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Patent Ltd.
  • Priority: KR10-2010-0137922 20101229
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Internal voltage generation circuit and semiconductor integrated circuit
Abstract:
A semiconductor integrated circuit includes first and second bank groups, a first internal voltage control unit configured to generate a first enable pulse which is enabled when a first read operation or a first write operation is performed for banks included in the first bank group, and a first internal voltage generation unit configured to generate and supply a first internal voltage to the first bank group in response to the first enable pulse, wherein an enable period of the first enable pulse is set to be longer in the first write operation than in the first read operation.
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