Invention Grant
US08649233B2 Semiconductor device 失效
半导体器件

  • Patent Title: Semiconductor device
  • Patent Title (中): 半导体器件
  • Application No.: US13276919
    Application Date: 2011-10-19
  • Publication No.: US08649233B2
    Publication Date: 2014-02-11
  • Inventor: Noriaki Mochida
  • Applicant: Noriaki Mochida
  • Priority: JP2010-253909 20101112
  • Main IPC: G11C7/22
  • IPC: G11C7/22 G11C8/18
Semiconductor device
Abstract:
A first data amplifier connects to a first memory cell identified by an X-address signal and a selection signal obtained by predecoding a Y-address signal. A second data amplifier connects to a second memory cell identified by the X-address signal and a delayed selection signal obtained by delaying the selection signal. A generator generates a delayed operation clock signal by delaying an operation clock signal of the first data amplifier. A timing controller receives a first control signal for controlling an operation of the first data amplifier and a second control signal for controlling an operation of the second data amplifier, outputs the first control signal to the first data amplifier at a timing according to the operation clock signal, and outputs the second control signal to the second data amplifier at a timing according to the delayed operation clock signal.
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