Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13285181Application Date: 2011-10-31
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Publication No.: US08649234B2Publication Date: 2014-02-11
- Inventor: Toshifumi Watanabe , Hidetoshi Saito
- Applicant: Toshifumi Watanabe , Hidetoshi Saito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-028664 20110214
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
According to one embodiment, an interface includes first to third input circuits, delay and selection circuits. The first input circuit outputs an active first internal signal in response to an active first control signal received by a memory device. The second input circuit outputs an active second internal signal in response to an active second control signal received by the device while the device is receiving the active first control signal. The delay circuit outputs a selection signal in first or second states after the elapse of a first period from inactivation or activation of the first control signal. The selection circuit outputs the first and second internal signals as an enable signal while receiving the selection signal of the first and second states. The third input circuit outputs an input signal received from the outside from the interface to inside the device while receiving the active enable signal.
Public/Granted literature
- US20120206970A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-08-16
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