Invention Grant
- Patent Title: Semiconductor memory device and operating method thereof
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US12917584Application Date: 2010-11-02
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Publication No.: US08649235B2Publication Date: 2014-02-11
- Inventor: Gyung-Tae Kim
- Applicant: Gyung-Tae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0083965 20100830
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device includes an enable fuse unit configured to generate a repair enable signal corresponding to a cutting state of an enable fuse after a power-up operation starts, and an address fuse unit enabled in response to the repair enable signal, and configured to generate an output signal in response to an external address and whether or not an address fuse is programmed.
Public/Granted literature
- US20120051163A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2012-03-01
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