Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12848784Application Date: 2010-08-02
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Publication No.: US08649896B2Publication Date: 2014-02-11
- Inventor: Kaoru Yokosawa
- Applicant: Kaoru Yokosawa
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Womble Carlyle
- Priority: JP2009-217825 20090918
- Main IPC: G06F19/00
- IPC: G06F19/00

Abstract:
A management method is able to quickly investigate the cause of a defect generated in a semiconductor product manufacturing process. Manufacturing conditions in various QFP manufacturing steps are stored in a main server while correlating them with an identification number of the QFP, and a two-dimensional bar code corresponding to the identification number is stamped to the surface of the QFP. In the event of occurrence of a defect of the QFP, the manufacturing conditions for the QFP stored in the main server can be traced in an instant by reading the two-dimensional bar code of the QFP and thereby specifying the identification number.
Public/Granted literature
- US20110071662A1 Manufacturing Method of Semiconductor Device Public/Granted day:2011-03-24
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