Invention Grant
US08650366B2 Memory system capable of enhancing writing protection and related method 有权
能够增强书写保护和相关方法的内存系统

  • Patent Title: Memory system capable of enhancing writing protection and related method
  • Patent Title (中): 能够增强书写保护和相关方法的内存系统
  • Application No.: US12900489
    Application Date: 2010-10-08
  • Publication No.: US08650366B2
    Publication Date: 2014-02-11
  • Inventor: Hsu-Ming Lee
  • Applicant: Hsu-Ming Lee
  • Applicant Address: TW Hsichih, New Taipei
  • Assignee: Wistron Corporation
  • Current Assignee: Wistron Corporation
  • Current Assignee Address: TW Hsichih, New Taipei
  • Agent Winston Hsu; Scott Margo
  • Priority: TW99115910A 20100519
  • Main IPC: G06F13/00
  • IPC: G06F13/00
Memory system capable of enhancing writing protection and related method
Abstract:
A memory system is disclosed. The memory system includes a memory device, a first control unit, and a second control unit. The memory device is utilized for storing data. The first control unit is coupled to the memory device for prohibiting a data writing process performed on the memory device during a writing protection period. The second control unit is coupled to the memory device for allowing the data writing process to be performed in the memory device according to a writing period after the writing protection period, wherein the writing period is related to the data writing process.
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