Invention Grant
US08650366B2 Memory system capable of enhancing writing protection and related method
有权
能够增强书写保护和相关方法的内存系统
- Patent Title: Memory system capable of enhancing writing protection and related method
- Patent Title (中): 能够增强书写保护和相关方法的内存系统
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Application No.: US12900489Application Date: 2010-10-08
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Publication No.: US08650366B2Publication Date: 2014-02-11
- Inventor: Hsu-Ming Lee
- Applicant: Hsu-Ming Lee
- Applicant Address: TW Hsichih, New Taipei
- Assignee: Wistron Corporation
- Current Assignee: Wistron Corporation
- Current Assignee Address: TW Hsichih, New Taipei
- Agent Winston Hsu; Scott Margo
- Priority: TW99115910A 20100519
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
A memory system is disclosed. The memory system includes a memory device, a first control unit, and a second control unit. The memory device is utilized for storing data. The first control unit is coupled to the memory device for prohibiting a data writing process performed on the memory device during a writing protection period. The second control unit is coupled to the memory device for allowing the data writing process to be performed in the memory device according to a writing period after the writing protection period, wherein the writing period is related to the data writing process.
Public/Granted literature
- US20110289259A1 MEMORY SYSTEM CAPABLE OF ENHANCING WRITING PROTECTION AND RELATED METHOD Public/Granted day:2011-11-24
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