Invention Grant
- Patent Title: Probabilistic error correction in multi-bit-per-cell flash memory
- Patent Title (中): 多比特单元闪存中的概率误差校正
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Application No.: US12401634Application Date: 2009-03-11
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Publication No.: US08650462B2Publication Date: 2014-02-11
- Inventor: Simon Litsyn , Idan Alrod , Eran Sharon , Mark Murin , Menahem Lasser
- Applicant: Simon Litsyn , Idan Alrod , Eran Sharon , Mark Murin , Menahem Lasser
- Applicant Address: IL Tel Aviv
- Assignee: Ramot at Tel Aviv University Ltd.
- Current Assignee: Ramot at Tel Aviv University Ltd.
- Current Assignee Address: IL Tel Aviv
- Agency: Alston & Bird LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M13/00

Abstract:
Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.
Public/Granted literature
- US20090327841A1 PROBABILISTIC ERROR CORRECTION IN MULTI-BIT-PER-CELL FLASH MEMORY Public/Granted day:2009-12-31
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