Invention Grant
- Patent Title: Manufacturing apparatus of polycrystalline silicon
- Patent Title (中): 多晶硅制造装置
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Application No.: US12555085Application Date: 2009-09-08
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Publication No.: US08652256B2Publication Date: 2014-02-18
- Inventor: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- Applicant: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2008-231163 20080909
- Main IPC: C30B25/00
- IPC: C30B25/00

Abstract:
A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.
Public/Granted literature
- US20100058988A1 MANUFACTURING APPARATUS OF POLYCRYSTALLINE SILICON Public/Granted day:2010-03-11
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