Invention Grant
- Patent Title: Method for manufacturing light-emitting device and manufacturing apparatus of light-emitting device
- Patent Title (中): 发光元件的制造方法以及发光元件的制造装置
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Application No.: US13357900Application Date: 2012-01-25
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Publication No.: US08652859B2Publication Date: 2014-02-18
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-017966 20110131
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26
Abstract:
An object is to provide a method for manufacturing a light-emitting device in which a defective portion is insulated. In addition, another object is to provide a manufacturing apparatus of a light-emitting device in which a defective portion is insulated. After a hemispherical lens is formed to overlap with a light-emitting element, the defective portion is detected. Then, the hemispherical lens overlapping with the light-emitting element including the detected defective portion may be irradiated with a laser beam having a low energy density, and the defective portion may be insulated by light condensed through the hemispherical lens.
Public/Granted literature
- US20120196388A1 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND MANUFACTURING APPARATUS OF LIGHT-EMITTING DEVICE Public/Granted day:2012-08-02
Information query
IPC分类:
