Invention Grant
- Patent Title: Micrometer-scale grid structure based on single crystal silicon and method of manufacturing the same
- Patent Title (中): 基于单晶硅的千分尺格栅结构及其制造方法
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Application No.: US12990037Application Date: 2010-06-25
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Publication No.: US08652867B2Publication Date: 2014-02-18
- Inventor: Binbin Jiao , Dapeng Chen
- Applicant: Binbin Jiao , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Morgan, Lewis & Bockius LLP
- Priority: CN200910090124 20090729
- International Application: PCT/CN2010/074447 WO 20100625
- International Announcement: WO2011/012036 WO 20110203
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention discloses a micrometer-scale grid structure based on single crystal silicon consists of periphery frame 1 and grid zone 2. The periphery frame 1 is rectangle, and grid zone 2 has a plurality of mesh-holes 3 distributing in the plane of grid zone 2. The present invention also provides a method for manufacturing a micrometer-scale grid structure based on single crystal silicon. According to the present invention thereof, the contradiction between demand of broad deformation space for sensor and actuator and the limit of the thickness of sacrifice layer is solved. Furthermore, the special requirement of double-side transparence for some optical sensor is met.
Public/Granted literature
- US20110175180A1 Micrometer-scale Grid Structure Based on Single Crystal Silicon and Method of Manufacturing the Same Public/Granted day:2011-07-21
Information query
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