Invention Grant
- Patent Title: Method for roughening substrate surface and method for manufacturing photovoltaic device
- Patent Title (中): 粗糙化基板表面的方法和制造光伏器件的方法
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Application No.: US13256771Application Date: 2009-08-27
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Publication No.: US08652869B2Publication Date: 2014-02-18
- Inventor: Kunihiko Nishimura , Shigeru Matsuno , Daisuke Niinobe
- Applicant: Kunihiko Nishimura , Shigeru Matsuno , Daisuke Niinobe
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-074185 20090325
- International Application: PCT/JP2009/064938 WO 20090827
- International Announcement: WO2010/109692 WO 20100930
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.
Public/Granted literature
- US20120015470A1 METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE Public/Granted day:2012-01-19
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