Invention Grant
US08652936B2 Vertical cavity surface emitting devices incorporating wafer fused reflectors
有权
垂直空腔表面发射器件，包括晶圆熔融反射器
- Patent Title: Vertical cavity surface emitting devices incorporating wafer fused reflectors
- Patent Title (中): 垂直空腔表面发射器件，包括晶圆熔融反射器
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Application No.: US13380328Application Date: 2010-07-01
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Publication No.: US08652936B2Publication Date: 2014-02-18
- Inventor: Alexei Sirbu , Alexandru Mereuta , Andrei Caliman
- Applicant: Alexei Sirbu , Alexandru Mereuta , Andrei Caliman
- Applicant Address: CH Lausanne
- Assignee: Ecole Polytechnique Federale de Lausanne
- Current Assignee: Ecole Polytechnique Federale de Lausanne
- Current Assignee Address: CH Lausanne
- Agency: Saliwanchik, Lloyd & Eisenschenk
- International Application: PCT/EP2010/003980 WO 20100701
- International Announcement: WO2011/000568 WO 20110106
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/46 ; H01S5/00
Abstract:
A method of forming an optoelectronic device comprising growing a first multi-layer 2 representing a reflector on a first substrate and a second multilayer 4 representing an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layer 2 to a third substrate 3, wherein the material of the third substrate 3 is lattice matched with respect to the material of the second multi-layer 4, removing the first substrate to expose the first multi-layer 2, and fusing the first multi-layer to the second multi-layer 4.
Public/Granted literature
- US20120134381A1 VERTICAL CAVITY SURFACE EMITTING DEVICES INCORPORATING WAFER FUSED REFLECTORS Public/Granted day:2012-05-31
Information query
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