Invention Grant
US08652956B2 High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
有权
通过在栅极图案化之前使用掩模状态分开去除占位符材料而形成的高k金属栅电极结构
- Patent Title: High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
- Patent Title (中): 通过在栅极图案化之前使用掩模状态分开去除占位符材料而形成的高k金属栅电极结构
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Application No.: US13533807Application Date: 2012-06-26
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Publication No.: US08652956B2Publication Date: 2014-02-18
- Inventor: Sven Beyer , Klaus Hempel , Thilo Scheiper , Stefanie Steiner
- Applicant: Sven Beyer , Klaus Hempel , Thilo Scheiper , Stefanie Steiner
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102009047306 20091130
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/092
Abstract:
In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.
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