Invention Grant
- Patent Title: Cavity process etch undercut monitor
- Patent Title (中): 腔工艺蚀刻底切显示器
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Application No.: US13411861Application Date: 2012-03-05
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Publication No.: US08652971B2Publication Date: 2014-02-18
- Inventor: Ricky Alan Jackson , Walter Baker Meinel , Karen Hildegard Ralston Kirmse
- Applicant: Ricky Alan Jackson , Walter Baker Meinel , Karen Hildegard Ralston Kirmse
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L23/544
Abstract:
A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.
Public/Granted literature
- US20120223401A1 CAVITY PROCESS ETCH UNDERCUT MONITOR Public/Granted day:2012-09-06
Information query
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