Invention Grant
- Patent Title: Photoelectric conversion device and image sensor
- Patent Title (中): 光电转换装置和图像传感器
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Application No.: US13231456Application Date: 2011-09-13
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Publication No.: US08653431B2Publication Date: 2014-02-18
- Inventor: Shimpei Ogawa
- Applicant: Shimpei Ogawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-207409 20100916; JP2011-167109 20110729
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
There is provided a photoelectric conversion device utilizing surface plasmons, including: a plate-shaped light receiving portion which made of metal, provided on a most superficial surface of the photoelectric conversion device, and having a front surface and a rear surface so as to receive incident light at the front surface; a slot-shaped slit provided in the front surface of the light receiving portion; and a voltage detection portion adapted to measure an electric potential at the front surface of the light receiving portion; wherein the incident light is caused to excite surface plasmons through the slit, and an electric potential at the front surface of the light receiving portion induced by the surface plasmons is measured by the voltage detection portion.
Public/Granted literature
- US20120068049A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR Public/Granted day:2012-03-22
Information query
IPC分类: