Invention Grant
- Patent Title: Scanning electron microscope
- Patent Title (中): 扫描电子显微镜
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Application No.: US13518236Application Date: 2010-12-24
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Publication No.: US08653459B2Publication Date: 2014-02-18
- Inventor: Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
- Applicant: Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2009-297104 20091228
- International Application: PCT/JP2010/073315 WO 20101224
- International Announcement: WO2011/081087 WO 20110707
- Main IPC: H01J37/20
- IPC: H01J37/20

Abstract:
There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.
Public/Granted literature
- US20120256087A1 Scanning Electron Microscope Public/Granted day:2012-10-11
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