Invention Grant
US08653499B2 Light-emitting diode with strain-relaxed layer for reducing strain in active layer
有权
具有应变松弛层的发光二极管，用于降低活性层中的应变
- Patent Title: Light-emitting diode with strain-relaxed layer for reducing strain in active layer
- Patent Title (中): 具有应变松弛层的发光二极管，用于降低活性层中的应变
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Application No.: US13153690Application Date: 2011-06-06
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Publication No.: US08653499B2Publication Date: 2014-02-18
- Inventor: Shih-Chang Lee
- Applicant: Shih-Chang Lee
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00
Abstract:
A light-emitting diode (LED) includes a first conductivity type semiconductor layer, a strain-relaxed layer over the first conductivity type semiconductor layer, an active layer over the strain-relaxed layer, and a second conductivity type semiconductor layer over the active layer. The strain-relaxed layer includes a strain-absorbed layer over the first conductivity type semiconductor layer and a surface-smoothing layer on the strain-absorbed layer filling the cavities. The strain-absorbed layer includes a plurality of cavities in a substantial hexagonal-pyramid form.
Public/Granted literature
- US20120305888A1 LIGHT-EMITTING DIODE WITH STRAIN-RELAXED LAYER Public/Granted day:2012-12-06
Information query
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