Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13092633Application Date: 2011-04-22
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Publication No.: US08653529B2Publication Date: 2014-02-18
- Inventor: Shinzo Ishibe , Katsuhiko Kitagawa
- Applicant: Shinzo Ishibe , Katsuhiko Kitagawa
- Applicant Address: BM Hamilton
- Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee Address: BM Hamilton
- Agency: Morrison & Foerster LLP
- Priority: JP2010-101977 20100427
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/339

Abstract:
In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.
Public/Granted literature
- US20110260276A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-10-27
Information query
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