Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13394549Application Date: 2010-09-02
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Publication No.: US08653533B2Publication Date: 2014-02-18
- Inventor: Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
- Applicant: Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-206372 20090907; JP2009-206373 20090907; JP2009-206374 20090907
- International Application: PCT/JP2010/065057 WO 20100902
- International Announcement: WO2011/027831 WO 20110310
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
Public/Granted literature
- US20120223338A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-06
Information query
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