Invention Grant
- Patent Title: Junction Barrier Schottky diodes with current surge capability
- Patent Title (中): 具有电流浪涌功能的结型势垒肖特基二极管
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Application No.: US13547014Application Date: 2012-07-11
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Publication No.: US08653534B2Publication Date: 2014-02-18
- Inventor: Qingchun Zhang , Sei-Hyung Ryu
- Applicant: Qingchun Zhang , Sei-Hyung Ryu
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact. The JBS regions have a second conductivity type opposite the first conductivity type and have a first spacing between adjacent ones of the JBS regions. The device further includes a plurality of surge protection subregions having the second conductivity type. Each of the surge protection subregions has a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.
Public/Granted literature
- US20120273802A1 JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY Public/Granted day:2012-11-01
Information query
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