Invention Grant
- Patent Title: Layer assembly for a light-emitting component
- Patent Title (中): 用于发光部件的层组件
-
Application No.: US11573617Application Date: 2005-06-16
-
Publication No.: US08653537B2Publication Date: 2014-02-18
- Inventor: Gufeng He , Martin Pfeiffer , Jan Blochwitz-Nimoth
- Applicant: Gufeng He , Martin Pfeiffer , Jan Blochwitz-Nimoth
- Applicant Address: DE Dresden
- Assignee: Novaled AG
- Current Assignee: Novaled AG
- Current Assignee Address: DE Dresden
- Agency: Sutherland Asbill & Brennan LLP
- Priority: DE102004039594 20040813; EP04019276 20040813
- International Application: PCT/DE2005/001076 WO 20050616
- International Announcement: WO2006/015567 WO 20060216
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
The invention relates to a layer assembly for a light-emitting component, in particular a phosphorescent organic light-emitting diode, having a hole-injecting contact and an electron-injecting contact which are each connected to a light-emitting region, wherein, in the light-emitting region, one light-emitting layer is made up of a material (M1) and another light-emitting layer is made up of another material (M2), where the material (M1) is ambipolar and preferentially transports holes and the other material (M2) is ambipolar and preferentially transports electrons; a heterotransition is formed by the material (M1) and the other material (M2) in the light-emitting region; an interface between the material (M1) and the other material (M2) is of the staggered type II; the material (M1) and the other material (M2) each contain an appropriate addition of one or more triplet emitter dopants; and an energy barrier for transfer of holes from the material (M1) into the other material (M2) and an energy barrier for transfer of electrons from the other material (M2) into the material (M1) are each less than about 0.4 eV.
Public/Granted literature
- US20080203406A1 Layer Assembly for a Light-Emitting Component Public/Granted day:2008-08-28
Information query
IPC分类: