Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12762628Application Date: 2010-04-19
-
Publication No.: US08653541B2Publication Date: 2014-02-18
- Inventor: Kouji Ikeda , Takanori Yamashita , Masami Iseki
- Applicant: Kouji Ikeda , Takanori Yamashita , Masami Iseki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2009-104213 20090422; JP2010-068285 20100324
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device including a plurality of circuits that includes a transistor, where a semiconductor layer forming the transistor includes a first contact pad, a first part that is connected to the first contact pad and that extends in a direction intersecting a short direction of a pitch with which the circuits are arranged, a second part that extends from the first part in the short direction, and a second contact pad including the first part and the second part that are provided between the first contact pad and the second contact pad, where the second part overlaps an electrode layer across an insulating layer.
Public/Granted literature
- US20100270678A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-10-28
Information query
IPC分类: