Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
-
Application No.: US13774996Application Date: 2013-02-22
-
Publication No.: US08653552B2Publication Date: 2014-02-18
- Inventor: Takuya Kazama
- Applicant: Stanley Electric Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2012-038146 20120224; JP2012-164824 20120725
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The light-emitting device includes a groove passing through a second semiconductor layer and a light-emitting layer to reach a first semiconductor layer; a first ohmic electrode in contact with the first semiconductor layer within the groove; a connection electrode passing through the first semiconductor layer from the surface thereof and electrically connected to the first ohmic electrode; an insulating layer for covering the second semiconductor layer on a surface thereof opposing the first semiconductor layer, the insulating layer having an opening; a second ohmic electrode in contact with the second semiconductor layer in the opening; a metal layer formed over the insulating layer, and connected to the second ohmic electrode; and a support bonded to the metal layer.
Public/Granted literature
- US20130228744A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2013-09-05
Information query
IPC分类: