The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.