Invention Grant
- Patent Title: Dielectric layers and memory cells including metal-doped alumina
- Patent Title (中): 介电层和记忆单元，包括金属掺杂氧化铝
-
Application No.: US13017186Application Date: 2011-01-31
-
Publication No.: US08653573B2Publication Date: 2014-02-18
- Inventor: Brian A. Vaartstra
- Applicant: Brian A. Vaartstra
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
Public/Granted literature
- US20110121376A1 Dielectric Layers and Memory Cells Including Metal-Doped Alumina Public/Granted day:2011-05-26
Information query
IPC分类:
